This document contains the complete B.Tech Electronics Engineering / Basic Electronics Semester Examination question paper, designed for 70 marks with a duration of 3 hours. The paper evaluates a student’s understanding of semiconductor devices, electronic circuits, operational amplifiers, digital measuring instruments, and communication fundamentals. It is divided into three well-structured sections (A, B, and C), ensuring coverage of both theoretical knowledge and analytical problem-solving skills.
SECTION – A (Short Conceptual Questions – 7 × 2 = 14 Marks)
Students must attempt any seven out of the given eight questions. These short questions focus on basic principles, definitions, and conceptual clarity on key topics such as:
Classification of materials into conductors, semiconductors, and insulators using energy band diagrams
Basic operation and principle of Light Emitting Diode (LED)
Derivation of the relationship between α (alpha) and β (beta) in BJTs
Reason why FETs are called unipolar devices
Constructional differences between Depletion MOSFET and Enhancement MOSFET
Derivation of integrator circuit using an ideal operational amplifier
Advantages of digital instruments over analog instruments
Need and importance of modulation in communication engineering
These questions help evaluate foundational understanding of electronic components and circuits.
SECTION – B (Analytical & Descriptive Questions – 5 × 7 = 35 Marks)
Students must attempt any five out of eight questions. This section requires detailed explanations, device characteristics, waveforms, derivations, and circuit analysis.
Key topics include:
Semiconductor Diodes
Explanation of V–I characteristics of a p-n junction diode
Comparison between p-n diode and Zener diode
Rectifiers
Construction and working of a full-wave bridge rectifier
Input and output waveforms
Calculation of Peak Inverse Voltage (PIV)
MOSFET Characteristics
Construction and working of p-channel depletion MOSFET
Transfer and drain characteristics with diagram
Op-Amp Circuits
Calculation of output voltage from a given op-amp circuit
Understanding superposition of inputs
Transistor Biasing
Determination of R₁ and R_C for given biasing conditions (ICQ, VCEQ)
Digital Instruments
Block diagram and working of Ramp Type Digital Voltmeter (DVM)
Voltage-to-time conversion waveforms
Communication Engineering
Derivation of AM modulated waveform
Derivation of modulation index
Cathode Ray Oscilloscope (CRO)
Block diagram and operation of CRT
Measurement of unknown frequency using Lissajous figures in CRO
This section tests practical electronic circuit knowledge, math-based analysis, and application of theories.
SECTION – C (Long Answer Questions – 2 × 10.5 = 21 Marks)
Students must attempt any two out of three detailed questions. These questions require deeper explanation, device characteristics, and complete circuit understanding.
Q3 – Tunnel Diode & Clamper Design
Principle and construction of Tunnel Diode
Its unique negative resistance region and V–I characteristics
Designing a clamper circuit to achieve the waveform shown in the question
Q4 – JFET & Differential Amplifier
Construction and operation of N-Channel JFET
Transfer characteristics (ID vs VGS)
Block diagram and working of a differential amplifier
Definitions of CMRR and slew rate of operational amplifiers
Q5 – BJT Characteristics & Modulation
Input and output characteristics of CE n-p-n transistor configuration
Explanation of self-biasing technique
Need for modulation in communication systems
Types of modulation used in television broadcasting (AM, FM, PM)
This section measures high-level understanding of electronic devices, communication concepts, and analog circuit design.
